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SiC高溫退火爐
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SiC高溫退火爐
概要：
? 適用領(lǐng)域：化合物半導(dǎo)體 Relevant Industries: Compound Semiconductors ?適用材料：SiC Suitable for Processing: Silicon Carbide (SiC) ?晶圓尺寸：8/6英寸 Wafer Size: 8/6 inch ?適用工藝：高溫退火(Annealing) Applicable Processes: High-Temperature Annealing Applicable process: Annealing of SiC and GaN wafers
關(guān)鍵詞：
SiC高溫退火爐
SiC高溫退火爐
產(chǎn)品應(yīng)用/Product Applications
♦ 適用領(lǐng)域：化合物半導(dǎo)體 Relevant Industries: Compound Semiconductors
♦適用材料：SiC Suitable for Processing: Silicon Carbide (SiC)
♦晶圓尺寸：8/6英寸 Wafer Size: 8/6 inch
♦適用工藝：高溫退火(Annealing) Applicable Processes: High-Temperature Annealing Applicable process: Annealing of SiC and GaN wafers
技術(shù)指標(biāo) Technical Parameters：
♦ 制程溫度范圍：800°C-1600°C Process Temperature Range: 800°C-1600°C
♦ 批次片數(shù): 50片 Batch Capacity: 50 pcs
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